Yang Hui, Associate Researcher

Profile: 

Yang Hui, doctor of Engineering, associate researcher; She graduated from Beijing Jiaotong University in 2023 with a doctorate in optical engineering; From April 2021 to April 2022, she was jointly trained and served as a research fellow at the research institute of electronic science of Hokkaido University, sponsored by the China Scholarship Council, and her co-supervisor was professor Hiromichi Ohta. Her main research areas include transparent amorphous oxide films, thin film transistors, electric field thermopower modulation and spintronic materials and devices. In the past five years, she has published 16 papers in leading journals in the field, including 6 papers by the first author and corresponding author. She has participated in many international academic conferences and made presentations, and won the best paper, best presentation and other awards. As a mainstay, she participated in two National Natural Science Foundation projects, two major scientific research projects of the Japan Society for the Promotion of Science (JSPS), and presided over a Basic Research project of Central Universities.

Academic Background: 

2021.04-2022.04 Hokkaido University, Physical Electronics, Joint doctoral training (China Scholarship Council-sponsored)

2019.09-2023.09 Beijing Jiaotong University, Optical Engineering, PhD (MD-PhD program)

2017.09-2019.07 Beijing Jiaotong University, Electronic Science and Technology, Master (MD-PhD program)

2013.09-2017.07 Beijing University of Chemical Technology, Electronic Science and Technology, Bachelor

Work Experience:

2023.10-Present Shenzhen Technology University, School of New Materials and New Energy, Associate Researcher

Major Honors:

2022  The 29th International Display Workshop, Best student paper

2022  The 23th Hokudai-RIES International Symposium, Best Poster Award

2022  The 19th Symposium on Thin Film Materials and Devices, Best paper award

2022  Reiwa 4th Annual Japan Ceramic Association Tohoku Hokkaido Branc Research Presentation, Best Presentation Award

2021  Scholarship of China Scholarship Council

2020  Beijing Jiaotong University Excellent graduate student

2019-2022  Beijing Jiaotong University first-class scholarship

2018  Beijing Jiaotong University Excellent graduate assistant

2017  Beijing Jiaotong University Excellent graduate assistant Excellent graduate assistant

Research Interests:

1. Optoelectronic materials and devices

2. Spintronic materials and devices

Research Projects:

7. Major scientific research projects of the Japan Society for the Promotion of Science (JSPS): single crystal growth of oxide semiconductors and preparation of high-performance flexible devices, participated.

6. Major scientific research projects of the Japan Society for the Promotion of Science (JSPS): Interface control and development of high-performance thin film materials, participated.

5. Basic research project of Central universities: Development of low-temperature and high-performance amorphous IZTO based thin film transistor, presided.

4. Basic research expenses of Central universities: Development of zinc oxide and cuprous iodide thin film transistors, participated.

3. Basic research project of Central universities: Research and development of InZnSnO-based thin film transistors, participated.

2.National Natural Science Foundation Project: Development of low-temperature metal oxide thin film transistor, participated.

1. National Natural Science Foundation Project: Research on transparent TFT of amorphous metal oxides, participated.

Representative Papers:

16. H. Yang, W. Yang, J. Su, X. Zhang. Preparation and electrical characteristics of transparent thin film transistors with sputtered Aluminum and phosphorus co-doped Indium-Zinc-Oxide channel layer, Solid State Electronics, 2023, 208:108725.

15. P. Ghediya#, H. Yang#, T. Fujimoto, Y. Zhang, Y. Matsuo, Y. Magari, and H. Ohta*, Improved Electron Transport Properties of Zn-rich In-Ga-Zn-O Thin Film Transistors, Journal of Physical Chemistry C, 2023; 127 (5):2622-2627. 

14. H. Yang*, Y. Zhang, Y. Matsuo, Y. Magari, and H. Ohta*, Thermopower Modulation Analyses of High-mobility Transparent Amorphous Oxide Semiconductor Thin-Film Transistors, ACS Applied Electronic Materials, 2022, 4:5081-5086.

13. H. Yang, W. Yang, J. Su, and X. Zhang*. Enhancement-mode thin film transistor using amorphous phosphorus-doped Indium–Zinc–Tin-Oxide channel layer. Materials science in semiconductor processing, 2022, 137:106228.

12. H.Yang, J. Su, and X. Zhang*. Influence of oxygen flow during sputtering process on the electrical properties of Ga-doped InZnSnO thin film transistor. Semiconductor Science and Technology, 2021, 36:045006.

11. H. Yang, J. Su, R. Li, L. Jia, D. Liu, Y. Ma, and X. Zhang*. Achieving high performance thin film transistors based on Gallium doped Indium Zinc Tin Oxide, Superlattices and Microstructures, 2020, 141:106489.

10. W. Yang, H. Yang, J. Su, X. Zhang*, Preparation and electrical properties of Ni-doped InZnO thin film transistors, Materials science in semiconductor processing, 153, 2023, 107147.

9. J. Su, H. Yang, Y. Ma, R. Li, L. Jia, D. Liu, and X. Zhang. Annealing atmosphere-dependent electrical characteristics and bias stability of N-doped InZnSnO thin film transistors. Materials science in semiconductor processing, 113, 2020, 105040.

8. W. Yang, H. Yang, J. Su, X. Zhang, Preparation and electrical characteristics of Li–N co-doped InZnAlO thin film transistors by radio frequency magnetron sputtering, Vacuum, 205, 2022, 111419.

7. J. Su, H. Yang, W. Yang, X. Zhang, Electrical characteristics of tungsten doped InZnSnO thin film transistors by RF magnetron sputtering. Journal of Vacuum Science & Technology B, 40, 2022, 032201.

6. L. Jia, D. Liu, H. Yang, J. Su, L. Yi, and X. Zhang. Investigation on the electrical properties of amorphous IZALO thin-film transistors. Journal of Materials Science-Materials in Electronics,31, 2020, 4867-4871.

5. J. Su, Y. Ma, H. Yang, R. Li, L. Jia, D. Liu, and X. Zhang. Electrical characteristics of Li and N co-doped amorphous InZnSnO thin film transistors. Journal of Vacuum Science & Technology A, 37, 2019, 061511.

4. L. Jia, J. Su, D. Liu, H. Yang, R. Li, Y. Ma, L. Yi, and X. Zhang. Investigation on the electrical properties of amorphous Indium-Zinc-Titanium-Alumina Oxide thin film transistors. Materials science in semiconductor processing, 106, 2020, 104762.

3. D. Liu, L. Jia, J. Su, Y. Ma, H. Yang, and X. Zhang. Investigation on electrical characteristics of amorphous InZnSnMgO thin film transistors deposited at room-temperature. Journal of Materials Science-Materials in Electronics, 30, 2019, 20551-20555.

2. J. Su, R. Li, Y. Ma, S. Dai, Y. Wang, H. Yang, and X. Zhang. Annealing temperature effects on the structural and electrical properties of N-doped In-Zn-Sn-O TFT. Journal of Alloys and Compounds, 801, 2019, 33-39.

1. J. Su, Q. Wang, Y. Ma, R. Li, S. Dai, Y. Wang, H. Yang, and X. Zhang. Amorphous InZnO: Li/ZnSnO: Li dualactive-layer thin film transistors. Materials Research Bulletin, 111, 2019, 165-169.

Contact Information:

E-mail: linliyu@sztu.edu.cn