Xiang Boyuan, Experimentalist

Profile:

Xiang Boyuan, master of science, is an experimentalist. She graduated from the School of Physics and Microelectronics Science of Hunan University in 2010. After graduation, she joined Xiangneng Hualei Optoelectronics Co., Ltd. to participate in the development of GaN-based material MOCVD epitaxy process. She is skilled in a variety of MOCVD equipment models (AIXTRON, VEECO) and its process development, and familiar with LED chip process manufacturing. In December 2017, she joined the Shenzhen Key Laboratory of Semiconductor Lasers of the Chinese University of Hong Kong (Shenzhen) as Senior Engineer, responsible for GaAs-based laser chip process fabrication, equipment and laboratory management. She has extensive experience in epitaxial material growth and semiconductor fabrication process, especially in dry etching, and has applied for and obtained a number of patents as the first inventor, and participated in a number of publications as the process leader.

Academic Background:

September 2007- June 2010, Hunan University, School of Physics and Microelectronics Science, Master's degree

September 2003- June 2007 Hunan University, School of Physics and Microelectronics, Bachelor's degree

Work Experience:

March 2020-Present Shenzhen Technology University, School of New Materials and New Energy, Experimentalist

December 2017- January 2020 The Chinese University of Hong Kong (Shenzhen), Shenzhen Key Laboratory of Semiconductor Lasers, Senior Engineer

September 2016 - November 2017 Huizhou BYD Industrial Company Limited, Senior R&D Engineer

June 2010 - August 2016 Xiangneng Hualei Optoelectronics Co., Ltd, Process Engineer

Research Interests:

1. GaN-based LED material epitaxial growth

2. GaAs-based laser chip process

3. Effect of dry etching on devices

Research Projects:

3. Key Laboratory of Organic Optoelectronic Materials and Devices in Longgang District (participant)

2. Shenzhen Basic Research (free exploration, participant)

1. Key Laboratory of Semiconductor Lasers in Shenzhen (participant, completed)

Representative Papers:

3. Taojie Zhou and Mingchu Tang, Guohong Xiang, Boyuan Xiang,Huiyun Liu, Zhaoyu Zhang,* Continuous-Wave Quantum-Dot Photonic Crystal Lasers Grown on On-axis Silicon (001), Nature Communication,20 February 2020(11).

2. Xiu Liu, Lijuan Wang, Xuan Fang, Taojie Zhou, Guohong Xiang, Boyuan Xiang,Xueqing Chen, Suikong Hark, Hao Liang, Shuming Wang*, and Zhaoyu Zhang, Continuous Wave Operation of GaAsBi Microdisk Lasers at Room Temperature with Large Wavelength Ranging from 1.27 to 1.41 μm. Photonics Research,Vol7，issue5,p508,May1, 2019.

1. Taojie Zhou, Mingchu Tang, Guohong Xiang, Xuan Fang, Xiu Liu, Boyuan Xiang,Suikong Hark, Mickael Martin, Marin-Leonor Touraton, Thierry Baron, YiLu, Siming Chen, Huiyun Liu, Zhaoyu Zhang,* Ultra-low threshold InAs/Ga quantum dot microdisk lasers on planar on-axis Si (001) substrates, Optica,Vol6,Issue4,P430,Apr20,2019,.

Representative Patents:

1. An epitaxial structure for increasing the reverse voltage of GaN base (first inventor, granted)

2. An epitaxial structure for increasing the reverse voltage of GaN substrates and its growth method (first inventor, granted)

3. LED epitaxial structure with increased Mg hole concentration and its growth method (first inventor, granted)

4. LED epitaxial layer structure, growth method and LED chip using the structure (granted)

5. A disk type laser device (granted)

6. LED epitaxial layer structure and its fabrication method and semiconductor device (first inventor, published)

7. Light-emitting diode epitaxial wafer and its fabrication method (published)

8. A method for lowering the threshold of microcavity semiconductor lasers (published)

9. A method of manufacturing microcavity semiconductor laser and semiconductor (published)

Contact Information:

E-mail: xiangboyuan@sztu.edu.cn